IRF7105PBF mosfet equivalent, power mosfet.
S1 G1 S2 G2
The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multip.
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET .
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